A fabless company specializing
in GaN-based semiconducter devices
High Power GaN-on-SiC RF HEMTs
*GaN : Gallium Nitride *SiC : Silicon Carbide *HEMTs : High Electron Mobility Transistors
Proprietary GaN power device epitaxial and structural design
Differentiation in Epi/device structures and ownership of intellectual property rights (IP)
Ultra-fast switching and low-loss/high-efficiency power conversion
Thermal optimization design through electro-thermal co-design
Securing precision design capabilities to enhance product competitiveness and explore diverse business sectors
-
5G & 6G Mobile Network Infrastructure
ChipsK is preparing for the future of next-generation wireless communication that connects everything worldwide.
Based on proprietary structural design technology, we will provide customers with excellent GaN device solutions featuring high power density, high efficiency, wide bandwidth, and downsizing.
We are committed to delivering advanced wireless communication technologies to contribute to building next-generation network infrastructure.
-
Aerospace & Defense
The aerospace and defense sectors require high reliability and durability to withstand harsh environmental conditions.
We can provide miniaturized, lightweight, and optimized solutions tailored to meet customer requirements with precise delivery schedules.
Since ChipsK’s products are based on proprietary core technologies, they are free from restrictions such as export licenses from foreign countries, enabling efficient management of development timelines.
-
LEO(Low Earth Orbit) Satellite Communication
Future communication services are expected to expand spatially from land to sea and air, increasing the importance of satellite communications.
In particular, Low Earth Orbit (LEO) satellites at altitudes of 300 to 1,500 km provide high-speed services with shorter latency compared to geostationary satellites and will become a key component of next-generation communication infrastructure.
ChipsK will actively respond to these market demands by offering ultra-fast, low-latency, high-efficiency, and ultra-compact RF GaN device solutions.